rej03g5193-0100 rev.1.00 oct 23, 2007 page 1 of 7 H7N1004FN silicon n-channel mosfet high-speed power switching rej03g1593-0100 rev.1.00 oct 23, 2007 features ? low on-resistance ? r ds(on) = 25 m ? typ. ? low drive current ? available for 4.5 v gate drive outline renesas package code: prss0003ab-a (package name: to-220fn) 1 2 3 d s g 1. gate 2. drain 3. source absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 25 a drain peak current i d (pulse) note1 100 a body-drain diode reverse drain current i dr 25 a avalanche current i ap note 3 15 a avalanche energy e ar note 3 22.5 mj channel dissipation pch note 2 25 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ?
H7N1004FN rej03g5193-0100 rev.1.00 oct 23, 2007 page 2 of 7 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 a v ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, v ds = 10 v note 4 ? 25 35 m ? i d = 12.5 a, v gs = 10 v note 4 static drain to source on state resistance r ds(on) ? 30 45 m ? i d = 12.5 a, v gs = 4.5 v note 4 forward transfer admittance |y fs | 20 35 ? s i d = 12.5 a, v gs = 10 v note 4 input capacitance ciss ? 2800 ? pf output capacitance coss ? 240 ? pf reverse transfer capacitance crss ? 140 ? pf v ds = 10 v v gs = 0 f = 1 mhz total gate charge qg ? 50 ? nc gate to source charge qgs ? 9 ? nc gate to drain charge qgd ? 11 ? nc v dd = 50 v v gs = 10 v i d = 25 a turn-on delay time t d(on) ? 23 ? ns rise time t r ? 110 ? ns turn-off delay time t d(off) ? 70 ? ns fall time t f ? 9.5 ? ns v gs = 10 v, i d = 12.5 a r l = 2.4 ? rg = 4.7 ? body-drain diode forward voltage v df ? 0.89 ? v i f = 25 a, v gs = 0 body-drain diode reverse recovery time t rr ? 45 ? ns i f = 25 a, v gs = 0 di f /dt = 100 a/ s notes: 4. pulse test
H7N1004FN rej03g5193-0100 rev.1.00 oct 23, 2007 page 3 of 7 main characteristics 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 50 40 30 20 10 0 24 6810 50 40 30 20 10 0 1 5 0.03 0.01 100 ta = 25 c 10 v v gs = 3 v 3.5 v tc = 75 c 25 c -25 c drain to source voltage v ds (v) drain current i d (a) drain current i d (a) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) typical output characteristics pulse test gate to source voltage v gs (v) typical transfer characteristics v ds = 10 v pulse test 100 s 1 ms pw = 10 ms (1shot) dc operation (tc = 25 c) 10 s 6 v 4 v operation in this area is limited by r ds(on) 2 34 40 30 20 10 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating 1 5 20 100 21050 50 100 200 500 10 20 5 static drain to source on state resistance vs. drain current drain current i d (a) drain to source on state resistance r ds(on) (m ? ) pulse test v gs = 4.5 v 10 v 1.0 0.8 0.6 0.4 0.2 0 5 101520 drain to source saturation voltage vs. gate to source voltage i d = 20 a 10 a 5 a pulse test gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (v)
H7N1004FN rej03g5193-0100 rev.1.00 oct 23, 2007 page 4 of 7 100 80 60 40 20 ?25 0 25 50 75 100 125 150 0 0.01 100 10 100 10 0.1 1 0.01 0.1 1 25 c tc = ?25 c 75 c v ds = 10 v pulse test v gs = 10 v v gs = 4.5 v pulse test 5, 10 a 5, 10 a i d = 20 a i d = 20 a static drain to source on state resistance vs. temperature forward transfer admittance vs. drain current case temperature tc ( c) drain current i d (a) static drain to source on state resistance r ds(on) (m ? ) forward transfer admittance |y fs | (s) 01020304050 2000 5000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 20 50 10 v gs = 0 f = 1 mhz ciss coss crss i d = 25 a v ds v gs v dd = 25 v 50 v 100 v v dd = 100 v 50 v 25 v t r t d(on) t d(off) t f v gs = 10 v, v dd = 30 v pw = 5 s, duty 1% r g = 4.7 ? typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) dynamic input characteristics switching characteristics drain to source voltage v ds (v) gate to source voltage v gs (v) switching time t (ns) gate charge qg (nc) drain current i d (a) 0.1 0.3 1 3 10 30 100 100 20 50 10 di / dt = 100 a / s v gs = 0, ta = 25 c body-drain diode reverse recovery time reverse recovery time t rr (ns) reverse drain current i dr (a)
H7N1004FN rej03g5193-0100 rev.1.00 oct 23, 2007 page 5 of 7 d. u. t rg i ap monitor v ds monitor v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l i ap 2 2 1 v dss v dss ? v dd 40 32 24 16 8 25 50 75 100 125 150 0 i ap = 15 a v dd = 50 v duty < 0.1 % rg 50 ? channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform 0 0.4 0.8 1.2 1.6 2.0 50 40 30 20 10 v gs = 10 v 5 v pulse test 0, -5 v reverse drain current vs. source to drain voltage reverse drain current i dr (a) source drain voltage v sd (v) 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 5 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width
H7N1004FN rej03g5193-0100 rev.1.00 oct 23, 2007 page 6 of 7 vin monitor d.u.t. vin 10 v r l v ds = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg
H7N1004FN rej03g5193-0100 rev.1.00 oct 23, 2007 page 7 of 7 package dimensions ? 2.0g mass[typ.] ? prss0003ab-a renesas code jeita package code previous code unit: mm 3.2 0.2 2.8 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 10 0.3 1.1 0.2 6.5 0.3 3 0.3 3.6 0.3 15 0.3 14 0.5 1.1 0.2 4.5 0.2 2.6 0.2 package name to-220fn ordering information part no. quantity shipping container H7N1004FN 50 pcs plastic magazine (tube)
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